用于電子鎮(zhèn)流器、節(jié)能燈晶體管進(jìn)行測試。

Used for testing the transistors of  electronic ballasts, energy-saving lamps.

性能:

◆測量參數(shù):放大倍數(shù)β(0~99)

　 開關(guān)時(shí)間T (0.01μs~99.9μs)，包括上升時(shí)間，存儲(chǔ)時(shí)間，下降時(shí)間Tr，Ts，Tf

　 飽和壓降 VCES (0~2V)，正向壓降 VBE (0~2V)

　 漏電流ICEO (0.1μA~3mA)

　 耐壓BVCEO (50V~650V)

◆對測試的開關(guān)時(shí)間、β進(jìn)行分檔，可顯示批號；對VCES、VBE、ICEO、BVCEO 進(jìn)行超限判斷，

　 不合格的發(fā)出聲光報(bào)警，并用指示燈指明不合格項(xiàng)

◆測試條件可按要求自由調(diào)節(jié)或設(shè)定

　　A. β測試 Ib 注入電流有三檔: 0.1mA, 1mA, 10mA

　　B. 開關(guān)時(shí)間測試 Ic 電流有四檔: 0.5A, 0.25A, 0.1A, 0.05A

　　對應(yīng) Ib電流為: 0.1A, 0.05A, 0.02A, 0.01A

　　C. 漏電流 ICEO 測試電壓: 50~650V 連續(xù)可調(diào)

◆分檔、超限判斷可自由設(shè)定，掉電自動(dòng)保存，儀器能同時(shí)保存20組數(shù)據(jù)，使用時(shí)只要調(diào)出其中一組即可

◆四窗口數(shù)字顯示所測數(shù)據(jù)，讀數(shù)直觀

Performance:

◆ measured parameters: magnification β (0 ~ 99)

Switching time T (0.01μs ~ 99.9μs), including the rising time, storage time, falling time Tr, Ts, Tf

Saturated voltage drop VCES (0 ~ 2V), the positive voltage drop VBE (0 ~ 2V)

Leaking current ICEO (0.1μA ~ 3mA)

Voltage endurance BVCEO (50V ~ 650V)

◆ classify the switching time, β of the test, the batch numbers can be displayed; and judge the overrun of VCES, VBE, ICEO, BVCEO

It will make sound and light alarm when there is nonconformity, and indicate the failure with indicator light

◆ The test conditions can be adjusted or set freely according to requirement

A. in β test, the Ib has three levels of input current: 0.1mA, 1mA, 10mA

B. in Switching time test, there are four levels of Ic current: 0.5A, 0.25A, 0.1A, 0.05A

The corresponding Ib current is: 0.1A, 0.05A, 0.02A, 0.01A

C. in Leaking Current, ICEO Test Voltage: 50 ~ 650V continuously adjustable

◆ the classification, overrun determination can be set freely  and it can be saved automatically when there is blackout, the instrument can save 20 sets of data at the same moment, and you may just open one of the sets upon use

◆ 4 windows digitally display the measured data, the readings are objective